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Overview
Engineered with trench-gate technology and integrated fast-recovery diodes, this insulated-base module delivers efficient switching performance, low thermal resistance, and robust reliability for demanding power electronics systems. Dual IGBT module configuration 600 A continuous collector current 650 V collector-emitter voltage Trench-gate structure for improved efficiency Integrated fast-recovery diodes Isolated base for simplified thermal design Designed for high-current power electronics Strong mechanical design for harsh environments Part Number: CM600DX-13T Configuration: Dual IGBT half-bridge Collector Current (Ic): 600 A Collector-Emitter Voltage (Vces): 650 V VCE(sat): ~2.0 V at rated current Gate-Emitter Voltage (Vge): ±20 V Switching Characteristics: Fast rise and fall times Thermal Resistance (Junction-Case): ~0.035 °C/W Mounting Type: Chassis mount with isolated base Operating Temperature: –40 °C to +150 °C Package Type: Industrial IGBT module Weight: Approx.
Key Features
- Dual IGBT module configuration
- Trench-gate structure for improved efficiency
- Integrated fast-recovery diodes
- Isolated base for simplified thermal design
- Designed for high-current power electronics
- Strong mechanical design for harsh environments
Technical Specifications
- Manufacturer: Mitsubishi Electric
- Model: Mitsubishi CM600DX-13T
- Product type: IGBT power module
- Current rating: 600 A
- Voltage rating: 650 V
- Voltage rating: 0 V
- Voltage rating: 20 V
Applications
- Industrial automation systems
- Control panels
- Manufacturing equipment
Why Choose This Model?
- Clear technical identification for correct selection
- Reliable operation in industrial environments
- Supports long-term system stability
Order Now
Order Mitsubishi CM600DX-13T today to ensure reliable performance in your automation project.
Description
Overview
Engineered with trench-gate technology and integrated fast-recovery diodes, this insulated-base module delivers efficient switching performance, low thermal resistance, and robust reliability for demanding power electronics systems. Dual IGBT module configuration 600 A continuous collector current 650 V collector-emitter voltage Trench-gate structure for improved efficiency Integrated fast-recovery diodes Isolated base for simplified thermal design Designed for high-current power electronics Strong mechanical design for harsh environments Part Number: CM600DX-13T Configuration: Dual IGBT half-bridge Collector Current (Ic): 600 A Collector-Emitter Voltage (Vces): 650 V VCE(sat): ~2.0 V at rated current Gate-Emitter Voltage (Vge): ±20 V Switching Characteristics: Fast rise and fall times Thermal Resistance (Junction-Case): ~0.035 °C/W Mounting Type: Chassis mount with isolated base Operating Temperature: –40 °C to +150 °C Package Type: Industrial IGBT module Weight: Approx.
Key Features
- Dual IGBT module configuration
- Trench-gate structure for improved efficiency
- Integrated fast-recovery diodes
- Isolated base for simplified thermal design
- Designed for high-current power electronics
- Strong mechanical design for harsh environments
Technical Specifications
- Manufacturer: Mitsubishi Electric
- Model: Mitsubishi CM600DX-13T
- Product type: IGBT power module
- Current rating: 600 A
- Voltage rating: 650 V
- Voltage rating: 0 V
- Voltage rating: 20 V
Applications
- Industrial automation systems
- Control panels
- Manufacturing equipment
Why Choose This Model?
- Clear technical identification for correct selection
- Reliable operation in industrial environments
- Supports long-term system stability
Order Now
Order Mitsubishi CM600DX-13T today to ensure reliable performance in your automation project.