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Overview
Featuring trench-gate IGBT technology and integrated fast-recovery diodes, this chassis-mount module offers efficient operation, reliable thermal performance, and easy integration into industrial inverters and motor control systems. Dual IGBT configuration in half-bridge topology Rated for 150 A at 600 V Trench-gate IGBT technology for efficient switching Integrated free-wheeling diodes Low VCE(sat) for reduced conduction losses Insulated baseplate for simplified heat dissipation Fast switching performance for inverter-grade response Rugged industrial-grade construction Part Number: CM150DY‑12H Configuration: Dual IGBT with diodes Collector Current: 150 A continuous Collector-Emitter Voltage: 600 V VCE(sat): Approx.
Key Features
- Dual IGBT configuration in half-bridge topology
- Trench-gate IGBT technology for efficient switching
- Integrated free-wheeling diodes
- Low VCE(sat) for reduced conduction losses
- Insulated baseplate for simplified heat dissipation
- Fast switching performance for inverter-grade response
Technical Specifications
- Manufacturer: Mitsubishi Electric
- Model: Mitsubishi CM150DY‑12H
- Product type: IGBT module
- Voltage rating: 600 V
- Current rating: 150 A
- Voltage rating: 2 V
- Voltage rating: 20 V
Applications
- Industrial automation systems
- Control panels
- Manufacturing equipment
Why Choose This Model?
- Clear technical identification for correct selection
- Reliable operation in industrial environments
- Supports long-term system stability
Order Now
Order Mitsubishi CM150DY‑12H today to ensure reliable performance in your automation project.
Description
Overview
Featuring trench-gate IGBT technology and integrated fast-recovery diodes, this chassis-mount module offers efficient operation, reliable thermal performance, and easy integration into industrial inverters and motor control systems. Dual IGBT configuration in half-bridge topology Rated for 150 A at 600 V Trench-gate IGBT technology for efficient switching Integrated free-wheeling diodes Low VCE(sat) for reduced conduction losses Insulated baseplate for simplified heat dissipation Fast switching performance for inverter-grade response Rugged industrial-grade construction Part Number: CM150DY‑12H Configuration: Dual IGBT with diodes Collector Current: 150 A continuous Collector-Emitter Voltage: 600 V VCE(sat): Approx.
Key Features
- Dual IGBT configuration in half-bridge topology
- Trench-gate IGBT technology for efficient switching
- Integrated free-wheeling diodes
- Low VCE(sat) for reduced conduction losses
- Insulated baseplate for simplified heat dissipation
- Fast switching performance for inverter-grade response
Technical Specifications
- Manufacturer: Mitsubishi Electric
- Model: Mitsubishi CM150DY‑12H
- Product type: IGBT module
- Voltage rating: 600 V
- Current rating: 150 A
- Voltage rating: 2 V
- Voltage rating: 20 V
Applications
- Industrial automation systems
- Control panels
- Manufacturing equipment
Why Choose This Model?
- Clear technical identification for correct selection
- Reliable operation in industrial environments
- Supports long-term system stability
Order Now
Order Mitsubishi CM150DY‑12H today to ensure reliable performance in your automation project.