Mitsubishi CM1000E2UA-24D

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$980.00

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Overview

With advanced trench-gate technology and an insulated baseplate, it ensures efficient switching, low conduction losses, and superior thermal management for high-reliability industrial systems. Single IGBT configuration Rated current: 1000 A Collector-emitter voltage: 1200 V Trench-gate IGBT technology High-speed switching capability Isolated baseplate for improved heat transfer Sturdy chassis-mount design Compatible with parallel configurations for higher power Part Number: CM1000E2UA-24D Configuration: Single IGBT Collector Current: 1000 A Collector-Emitter Voltage: 1200 V VCE(sat): ~2.0–2.2 V @ rated current Gate-Emitter Voltage: ±20 V Switching Speed: Fast Thermal Resistance (Junction-Case): ~0.025 °C/W Mounting Type: Chassis mount (isolated base) Operating Temperature: –40 °C to +150 °C Package: High-power IGBT module Weight: Approx.

Key Features

Single IGBT configuration
Trench-gate IGBT technology
High-speed switching capability
Isolated baseplate for improved heat transfer
Sturdy chassis-mount design
Compatible with parallel configurations for higher power

Technical Specifications

Manufacturer: Mitsubishi Electric
Model: Mitsubishi CM1000E2UA-24D
Product type: IGBT module
Rated current: 1000 A
Collector-emitter voltage: 1200 V
Current rating: 1000 A
Voltage rating: 1200 V
Voltage rating: 2 V
Voltage rating: 20 V
Weight: 1 kg

Applications

Industrial automation systems
Control panels
Manufacturing equipment

Why Choose This Model?

Clear technical identification for correct selection
Reliable operation in industrial environments
Supports long-term system stability

Order Now

Order Mitsubishi CM1000E2UA-24D today to ensure reliable performance in your automation project.

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