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ABB 5SGF40L4502
Overview
The ABB 5SGF40L4502 is a high-performance asymmetric Gate Turn-Off (GTO) thyristor ideal for challenging high-power scenarios. Featuring a current capacity of 4000 A and a blocking voltage of 4500 V, this device utilizes ABB’s patented free-floating silicon technology, offering reduced switching and conduction losses. It includes an annular gate electrode and is enclosed in a robust round package, making it suitable for traction, HVDC, and industrial power systems.
Key Features
-
Rated current: 4000 A
-
Blocking voltage: 4500 V
-
Annular gate electrode for efficient current control
-
Free-floating silicon for improved thermal behavior
-
Low switching and conduction losses
-
Radiation-resistant structure
-
Industry-standard round GTO housing
-
High mounting force of 40 kN for secure installation
Technical Specifications
-
Product ID: 5SGF40L4502
-
Type: Asymmetric Gate Turn-Off Thyristor (GTO)
-
ITGQM: 4000 A
-
VDRM: 4500 V
-
Mounting Force: 40 kN
-
Gate Structure: Annular electrode
-
Housing Type: Industry-standard round
-
Silicon Design: Free-floating chip
-
Losses: Low on-state and switching
-
Radiation Resistance: Yes (cosmic radiation rated)
Applications
-
Railway traction drives
-
HVDC transmission systems
-
High-voltage static converters
-
Industrial inverter systems
-
Energy control and storage modules
Why Choose the 5SGF40L4502
-
High current and voltage capacity for critical applications
-
Enhanced thermal and electrical performance
-
Built for harsh industrial and power grid environments
-
Reliable, long-term ABB design
-
Compatibility with standard GTO system layouts
Order Now
The ABB 5SGF40L4502 GTO thyristor is perfect for high-reliability power switching and conversion. Ships worldwide.
Description
ABB 5SGF40L4502
Overview
The ABB 5SGF40L4502 is a high-performance asymmetric Gate Turn-Off (GTO) thyristor ideal for challenging high-power scenarios. Featuring a current capacity of 4000 A and a blocking voltage of 4500 V, this device utilizes ABB’s patented free-floating silicon technology, offering reduced switching and conduction losses. It includes an annular gate electrode and is enclosed in a robust round package, making it suitable for traction, HVDC, and industrial power systems.
Key Features
-
Rated current: 4000 A
-
Blocking voltage: 4500 V
-
Annular gate electrode for efficient current control
-
Free-floating silicon for improved thermal behavior
-
Low switching and conduction losses
-
Radiation-resistant structure
-
Industry-standard round GTO housing
-
High mounting force of 40 kN for secure installation
Technical Specifications
-
Product ID: 5SGF40L4502
-
Type: Asymmetric Gate Turn-Off Thyristor (GTO)
-
ITGQM: 4000 A
-
VDRM: 4500 V
-
Mounting Force: 40 kN
-
Gate Structure: Annular electrode
-
Housing Type: Industry-standard round
-
Silicon Design: Free-floating chip
-
Losses: Low on-state and switching
-
Radiation Resistance: Yes (cosmic radiation rated)
Applications
-
Railway traction drives
-
HVDC transmission systems
-
High-voltage static converters
-
Industrial inverter systems
-
Energy control and storage modules
Why Choose the 5SGF40L4502
-
High current and voltage capacity for critical applications
-
Enhanced thermal and electrical performance
-
Built for harsh industrial and power grid environments
-
Reliable, long-term ABB design
-
Compatibility with standard GTO system layouts
Order Now
The ABB 5SGF40L4502 GTO thyristor is perfect for high-reliability power switching and conversion. Ships worldwide.