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ABB 5SGA25H2501
Overview
The ABB 5SGA25H2501 is a powerful asymmetric Gate Turn-Off (GTO) thyristor designed for power electronics in industrial, traction, and energy systems. With a rating of 2500 A and 2500 V, this thyristor includes innovative free-floating silicon technology, a circular gate electrode, and an industry-standard 93 mm package. Engineered to reduce conduction and switching losses while enhancing reliability, it’s ideal for high-demand high-power applications.
Key Features
Rated current: 2500 A
Blocking voltage: 2500 V
Asymmetric gate turn-off design
Low switching and on-state losses
Annular gate structure for efficient current handling
Free-floating silicon die design
High resistance to cosmic radiation
Industry-standard round housing (93 mm)
Mounting force: 20 kN
Technical Specifications
Product ID: 5SGA25H2501
Type: Asymmetric Gate Turn-Off Thyristor (GTO)
ITGQM: 2500 A
VDRM: 2500 V
Package Diameter: 93 mm
Package Height: 26 mm
Gross Weight: 0.8 kg
Mounting Force: 20 kN
Housing Type: Industry-standard round
Gate Configuration: Annular electrode
Design Features: Free-floating silicon, low loss, radiation-resistant
Applications
Rail traction systems
Industrial motor drives
Power inverters and converters
Static VAR compensators
HVDC and energy transmission systems
Why Choose the 5SGA25H2501
Delivers high current capacity with minimal power loss
Mechanically robust and thermally stable
Trusted ABB semiconductor reliability
Compact, industry-standard footprint
Ideal for legacy replacements or new high-power builds
Order Now
The ABB 5SGA25H2501 is ready for use in high-demand environments. Built for performance, reliability, and efficient switching in global power systems.
Description
ABB 5SGA25H2501
Overview
The ABB 5SGA25H2501 is a powerful asymmetric Gate Turn-Off (GTO) thyristor designed for power electronics in industrial, traction, and energy systems. With a rating of 2500 A and 2500 V, this thyristor includes innovative free-floating silicon technology, a circular gate electrode, and an industry-standard 93 mm package. Engineered to reduce conduction and switching losses while enhancing reliability, it’s ideal for high-demand high-power applications.
Key Features
Rated current: 2500 A
Blocking voltage: 2500 V
Asymmetric gate turn-off design
Low switching and on-state losses
Annular gate structure for efficient current handling
Free-floating silicon die design
High resistance to cosmic radiation
Industry-standard round housing (93 mm)
Mounting force: 20 kN
Technical Specifications
Product ID: 5SGA25H2501
Type: Asymmetric Gate Turn-Off Thyristor (GTO)
ITGQM: 2500 A
VDRM: 2500 V
Package Diameter: 93 mm
Package Height: 26 mm
Gross Weight: 0.8 kg
Mounting Force: 20 kN
Housing Type: Industry-standard round
Gate Configuration: Annular electrode
Design Features: Free-floating silicon, low loss, radiation-resistant
Applications
Rail traction systems
Industrial motor drives
Power inverters and converters
Static VAR compensators
HVDC and energy transmission systems
Why Choose the 5SGA25H2501
Delivers high current capacity with minimal power loss
Mechanically robust and thermally stable
Trusted ABB semiconductor reliability
Compact, industry-standard footprint
Ideal for legacy replacements or new high-power builds
Order Now
The ABB 5SGA25H2501 is ready for use in high-demand environments. Built for performance, reliability, and efficient switching in global power systems.