Mitsubishi CM900DU-24NF

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$910.00

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Overview

With a current rating of 900 A and voltage capacity of 1200 V, this module utilizes trench-gate technology and built-in fast recovery diodes to deliver efficient switching, low power loss, and superior thermal performance. Dual IGBT half-bridge module Collector current: 900 A Collector-emitter voltage: 1200 V Trench-gate IGBT structure Integrated fast-recovery diodes Insulated baseplate for optimized thermal transfer Rugged chassis mount package Designed for high-current industrial use Part Number: CM900DU-24NF Configuration: Dual IGBT Collector Current: 900 A (continuous) Collector-Emitter Voltage: 1200 V VCE(sat): ~2.0–2.2 V @ rated current Gate-Emitter Voltage: ±20 V Switching Speed: Fast Thermal Resistance (Junction-Case): ~0.025 °C/W Mounting Type: Chassis mount (insulated) Operating Temperature: –40 °C to +150 °C Package Type: High-power IGBT module Weight: Approx.

Key Features

Dual IGBT half-bridge module
Trench-gate IGBT structure
Integrated fast-recovery diodes
Insulated baseplate for optimized thermal transfer
Rugged chassis mount package
Designed for high-current industrial use

Technical Specifications

Manufacturer: Mitsubishi Electric
Model: Mitsubishi CM900DU-24NF
Product type: IGBT module
Collector current: 900 A
Collector-emitter voltage: 1200 V
Current rating: 900 A
Voltage rating: 1200 V
Voltage rating: 2 V
Voltage rating: 20 V

Applications

Industrial automation systems
Control panels
Manufacturing equipment

Why Choose This Model?

Clear technical identification for correct selection
Reliable operation in industrial environments
Supports long-term system stability

Order Now

Order Mitsubishi CM900DU-24NF today to ensure reliable performance in your automation project.

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