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Overview
With a 150 A current rating and 1200 V blocking voltage, it features trench-gate IGBT technology and integrated fast-recovery diodes to support low conduction losses, reliable performance, and thermal efficiency in industrial-grade systems. Dual IGBT half-bridge configuration Rated current: 150 A Collector-emitter voltage: 1200 V Trench-gate IGBT design Built-in fast-recovery diodes Insulated baseplate for efficient heat transfer Chassis mount construction Suitable for compact industrial power systems Part Number: CM150DY-24T Configuration: Dual IGBT with free-wheeling diodes Collector Current: 150 A Collector-Emitter Voltage: 1200 V VCE(sat): ~2.0–2.2 V at rated current Gate-Emitter Voltage: ±20 V Switching Speed: Fast Thermal Resistance (Junction-Case): ~0.16 °C/W Mounting Type: Chassis mount (isolated base) Operating Temperature: –40 °C to +150 °C Package Type: Power module Weight: Approx.
Key Features
- Dual IGBT half-bridge configuration
- Trench-gate IGBT design
- Built-in fast-recovery diodes
- Insulated baseplate for efficient heat transfer
- Chassis mount construction
- Suitable for compact industrial power systems
Technical Specifications
- Manufacturer: Mitsubishi Electric
- Model: Mitsubishi CM150DY-24T
- Product type: IGBT module
- Rated current: 150 A
- Collector-emitter voltage: 1200 V
- Current rating: 150 A
- Voltage rating: 1200 V
- Voltage rating: 2 V
- Voltage rating: 20 V
Applications
- Industrial automation systems
- Control panels
- Manufacturing equipment
Why Choose This Model?
- Clear technical identification for correct selection
- Reliable operation in industrial environments
- Supports long-term system stability
Order Now
Order Mitsubishi CM150DY-24T today to ensure reliable performance in your automation project.
Description
Overview
With a 150 A current rating and 1200 V blocking voltage, it features trench-gate IGBT technology and integrated fast-recovery diodes to support low conduction losses, reliable performance, and thermal efficiency in industrial-grade systems. Dual IGBT half-bridge configuration Rated current: 150 A Collector-emitter voltage: 1200 V Trench-gate IGBT design Built-in fast-recovery diodes Insulated baseplate for efficient heat transfer Chassis mount construction Suitable for compact industrial power systems Part Number: CM150DY-24T Configuration: Dual IGBT with free-wheeling diodes Collector Current: 150 A Collector-Emitter Voltage: 1200 V VCE(sat): ~2.0–2.2 V at rated current Gate-Emitter Voltage: ±20 V Switching Speed: Fast Thermal Resistance (Junction-Case): ~0.16 °C/W Mounting Type: Chassis mount (isolated base) Operating Temperature: –40 °C to +150 °C Package Type: Power module Weight: Approx.
Key Features
- Dual IGBT half-bridge configuration
- Trench-gate IGBT design
- Built-in fast-recovery diodes
- Insulated baseplate for efficient heat transfer
- Chassis mount construction
- Suitable for compact industrial power systems
Technical Specifications
- Manufacturer: Mitsubishi Electric
- Model: Mitsubishi CM150DY-24T
- Product type: IGBT module
- Rated current: 150 A
- Collector-emitter voltage: 1200 V
- Current rating: 150 A
- Voltage rating: 1200 V
- Voltage rating: 2 V
- Voltage rating: 20 V
Applications
- Industrial automation systems
- Control panels
- Manufacturing equipment
Why Choose This Model?
- Clear technical identification for correct selection
- Reliable operation in industrial environments
- Supports long-term system stability
Order Now
Order Mitsubishi CM150DY-24T today to ensure reliable performance in your automation project.