Mitsubishi CM200DY-24T

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$390.00

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Overview

With a trench-gate structure and integrated free-wheeling diodes, it delivers reliable performance, low conduction loss, and fast switching in a compact, insulated-base design. Dual IGBT half-bridge topology Continuous collector current: 200 A Collector-emitter voltage: 1200 V Trench-gate technology for improved efficiency Integrated fast-recovery diodes Insulated base for effective thermal transfer Rugged chassis-mount housing Suitable for high-power inverter systems Part Number: CM200DY-24T Configuration: Dual IGBT module Collector Current: 200 A Collector-Emitter Voltage: 1200 V VCE(sat): Approx.

Key Features

Dual IGBT half-bridge topology
Trench-gate technology for improved efficiency
Integrated fast-recovery diodes
Insulated base for effective thermal transfer
Rugged chassis-mount housing
Suitable for high-power inverter systems

Technical Specifications

Manufacturer: Mitsubishi Electric
Model: Mitsubishi CM200DY-24T
Product type: IGBT power module
Continuous collector current: 200 A
Collector-emitter voltage: 1200 V
Current rating: 200 A
Voltage rating: 1200 V
Voltage rating: 2 V
Voltage rating: 20 V

Applications

Industrial automation systems
Control panels
Manufacturing equipment

Why Choose This Model?

Clear technical identification for correct selection
Reliable operation in industrial environments
Supports long-term system stability

Order Now

Order Mitsubishi CM200DY-24T today to ensure reliable performance in your automation project.

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