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ABB 5SGF30J4502
Overview
The ABB 5SGF30J4502 is a high-power Gate Turn-Off (GTO) thyristor capable of handling 3000 A and 4500 V, designed for reliable performance in industrial and high-voltage switching systems. It incorporates ABB's unique free-floating silicon technology to reduce on-state and switching losses. Featuring an annular gate electrode and enclosed in a 108 mm round package, this GTO ensures excellent electrical efficiency and dependability under cosmic radiation conditions.
Key Features
Rated current: 3000 A
Blocking voltage: 4500 V
Annular gate electrode
Minimized switching and conduction losses
Free-floating silicon chip design
Structure resistant to radiation
Standard 108 mm round GTO package
Durable mechanical design with 33 kN mounting force
Technical Specifications
Product ID: 5SGF30J4502
Type: Gate Turn-Off Thyristor (GTO)
ITGQM: 3000 A
VDRM: 4500 V
Package Diameter: 108 mm
Package Height: 26 mm
Net Weight: 1.3 kg
Mounting Force: 33 kN
Gate Structure: Annular
Design Features: Free-floating silicon, radiation resistant
Housing: Industry-standard round
Applications
Traction and railway drives
HVDC transmission systems
Industrial motor inverters
High-voltage power controllers
Static inverters and converters
Why Choose the 5SGF30J4502
Balanced high current and voltage ratings
Optimized for compact, high-performance systems
Backed by ABB's proven GTO design
Enhanced safety with cosmic radiation resilience
Ideal for demanding industrial and traction environments
Order Now
The ABB 5SGF30J4502 GTO thyristor is crafted for high-voltage and high-reliability applications. Available for global shipping.
Description
ABB 5SGF30J4502
Overview
The ABB 5SGF30J4502 is a high-power Gate Turn-Off (GTO) thyristor capable of handling 3000 A and 4500 V, designed for reliable performance in industrial and high-voltage switching systems. It incorporates ABB's unique free-floating silicon technology to reduce on-state and switching losses. Featuring an annular gate electrode and enclosed in a 108 mm round package, this GTO ensures excellent electrical efficiency and dependability under cosmic radiation conditions.
Key Features
Rated current: 3000 A
Blocking voltage: 4500 V
Annular gate electrode
Minimized switching and conduction losses
Free-floating silicon chip design
Structure resistant to radiation
Standard 108 mm round GTO package
Durable mechanical design with 33 kN mounting force
Technical Specifications
Product ID: 5SGF30J4502
Type: Gate Turn-Off Thyristor (GTO)
ITGQM: 3000 A
VDRM: 4500 V
Package Diameter: 108 mm
Package Height: 26 mm
Net Weight: 1.3 kg
Mounting Force: 33 kN
Gate Structure: Annular
Design Features: Free-floating silicon, radiation resistant
Housing: Industry-standard round
Applications
Traction and railway drives
HVDC transmission systems
Industrial motor inverters
High-voltage power controllers
Static inverters and converters
Why Choose the 5SGF30J4502
Balanced high current and voltage ratings
Optimized for compact, high-performance systems
Backed by ABB's proven GTO design
Enhanced safety with cosmic radiation resilience
Ideal for demanding industrial and traction environments
Order Now
The ABB 5SGF30J4502 GTO thyristor is crafted for high-voltage and high-reliability applications. Available for global shipping.